Search for: All records

Abstract The use of optogenetic stimulation to evoke neuronal activity in targeted neural populations—enabled by opsins with fast kinetics, high sensitivity and cell-type and subcellular specificity—is a powerful tool in neuroscience. However, to interface with the opsins, deep-brain light delivery systems are required that match the scale of the spatial and temporal control offered by the molecular actuators. Here we show that organic light-emitting diodes can be combined with complementary metal–oxide–semiconductor technology to create bright, actively multiplexed emissive elements. We create implantable shanks in which 1,024 individually addressable organic light-emitting diode pixels with a 24.5 µm pitch are integrated with active complementary metal–oxide–semiconductor drive and control circuitry. This integration is enabled by controlled electrode conditioning, monolithic deposition of the organic light-emitting diodes and optimized thin-film encapsulation. The resulting probes can be used to access brain regions as deep as 5 mm and selectively activate individual neurons with millisecond-level precision in mice. 

Doping organic semiconductors has become a key technology to increase the performance of organic light-emitting diodes, solar cells, or field-effect transistors (OFETs). However, doping can be used not only to optimize these devices but also to enable new design principles as well. Here, a novel type of OFET is reported—the vertical organic tunnel field-effect transistor. Based on heterogeneously doped drain and source contacts, charge carriers are injected from an n-doped source electrode into the channel by Zener tunneling and are transported toward a p-doped drain electrode. The working mechanism of these transistors is discussed with the help of a tunnel model that takes energetic broadening of transport states in organic semiconductors and roughness of organic layers into account. The proposed device principle opens new ways to optimize OFETs. It is shown that the Zener junction included between the source and drain of the vertical organic tunnel field-effect transistors suppresses short channel effects and improves the saturation of vertical OFETs.